Description

The JM667QSJ-1G is a 128M x 64bits DDR2-667 SO-DIMM. The JM667QSJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The JM667QSJ-1G is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

• RoHS compliant products.


• JEDEC standard 1.8V ± 0.1V Power supply


• VDDQ=1.8V ± 0.1V


• Max clock Freq: 333MHZ; 667Mb/s/Pin.


• Posted CAS


• Programmable CAS Latency: 3,4,5


• Programmable Additive Latency :0, 1,2,3 and 4


• Write Latency (WL) = Read Latency (RL)-1


• Burst Length: 4,8(Interleave/nibble sequential)


• Programmable sequential / Interleave Burst Mode


• Bi-directional Differential Data-Strobe (Single-ended

data-strobe is an optional feature)

• Off-Chip Driver (OCD) Impedance Adjustment


• MRS cycle with address key programs.


• On Die Termination


• Serial presence detect with EEPROM

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